savantic semiconductor product specification silicon npn power transistors 2SC5150 d escription with to-3p(h)is package high speed high voltage low saturation voltage applications horizontal deflection output for high resolution display,colortv high speed switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1700 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 5 v i c collector current 10 a i cm collector current-peak 20 a i b base current 5 a p c collector power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3p(h)is) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC5150 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 700 v v cesat collector-emitter saturation voltage i c =6a ;i b =1.5a 3 v v besat base-emitter saturation voltage i c =6a ;i b =1.5a 0.9 1.2 v i cbo collector cut-off current v cb =1700v; i e =0 1 ma i ebo emitter cut-off current v eb =5v; i c =0 10 a h fe-1 dc current gain i c =1a ; v ce =5v 10 28 h fe-2 dc current gain i c =6a ; v ce =5v 4 8.5 c ob collector output capacitance i e =0 ; v cb =10v,f=1mhz 185 pf f t transition frequency i e =0.1a ; v ce =10v 2 mhz switching times (inductive load) t s storage time 2.5 4 s t f fall time i cp =5a;i b1 (end) =1a f h =64khz 0.15 0.3 s
savantic semiconductor product specification 3 silicon npn power transistors 2SC5150 package outline fig.2 outline dimensions (unindicated tolerance: 0.20 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SC5150
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